Systems and slurries for chemical mechanical polishing

ABSTRACT

Systems and methods are disclosed for polishing a semiconductor substrate having a polymer film surface deposited thereon by chemishearing the surface; and performing chemical mechanical polishing (CMP) on the chemisheared surface.

BACKGROUND

The invention relates to systems and slurries for polishingsemiconductor substrates.

To meet the needs for larger scale integration, which demands more metaland dielectric layers in devices, the surface topography of thesubstrate must exhibit exact depth of focus for sub-micron lithography.As discussed in U.S. Pat. No. 6,663,472, chemical mechanical polishing(CMP) is typically used for polishing materials, such as semiconductorsubstrates and precision optical components, to a high degree ofplanarity and uniformity. The process is used to initially planarizesemiconductor substrate and is also used to remove uneven topographycreated during the forming of the sub-micron circuitry on the substrate.Where the substrate is to be further processed, such as byphotolithography and etching, to create integrated circuit structures,any thickness variation in the planarized layer makes it difficult tomeet the fine resolution tolerances required to provide high yield offunctional die on a substrate. CMP is typically used in planarizinginterlayer insulating films and in shallow-trench separation, because itcan completely (both globally and locally) planarize layers to beexposed, reducing the burden on exposure techniques and stabilizing theproduction yield.

Another application of CMP is to form metal features inlaid in adielectric layer (in some cases, it is also called damascene), in whichCMP is utilized as a method of patterning. In the above mentionedpatterning process, trenches are first etched into the dielectric layer,metal layer is next deposited, and finally excess metal is removed usingCMP, leaving metal features co-planar with the dielectric layer surface.

A conventional CMP process involves supporting and holding the substrateagainst a rotating polishing pad that is wetted with polishing slurryand at the same time applying a pressure against the rotating pad. ThepH of the polishing slurry controls the chemical reaction, for example,the oxidation of the chemicals that make up the insulating layer of thesubstrate. The polishing pad is typically made from non-fibrouspolyurethane or a polyester-based material. The pad hardness istypically about between 50 and 70 durometers. Polishing pads used withsemiconductors are commercially available in a woven polyurethanematerial. The polishing slurry, which typically includes an abrasivematerial, is maintained on the polishing pad to modify the polishingcharacteristics of the pad in order to enhance the polishing andplanarization of the substrate.

The CMP polishing action is typically aided by a slurry which includesfor example, small abrasive particles such as silica (SiO₂) or alumina(Al₂O₃) that abrasively act to remove a portion of the material on thesurface being polished. Additionally, the slurry may include chemicalsthat react with the process surface to assist in removing a portion ofthe surface material, the slurry typically being separately introducedbetween the wafer surface and the polishing pad. During the polishing orplanarization process, the wafer is typically pressed against a rotatingpolishing pad. In addition, the wafer may also rotate and oscillate backand forth over the surface of the polishing pad to improve polishingeffectiveness.

As discussed in U.S. Pat. No. 6,638,328, typical CMP polishing slurriescontain an abrasive material, such as silica or alumina, suspended in anoxidizing, aqueous medium. There are various mechanisms disclosed in theprior art by which metal surfaces can be polished with slurries. Themetal surface may be polished using a slurry where a surface film is notformed causing the process to proceed by mechanical removal of metalparticles. In using this method, the chemical dissolution rate should beslow in order to avoid wet etching. A more preferred mechanismcontinuously forms a thin, soft, and abradable layer through a reactionbetween the metal surface and one or more components in the slurry suchas a complexing agent and/or a film forming layer such as an oxidizer.The thin abradable layer is then removed in a controlled manner bymechanical action. In competing with mechanical action, a thin passivefilm is formed on the surface and controls the wet etching process.Controlling the chemical mechanical polishing process can be easier withthis approach. There are also several different types of slurries usedin the CMP process. Common abrasives include silica (SiO₂), alumina(Al₂O₃), ceria (CeO₂), titania (TiO₂), and zirconia (ZrO₂).

Polymers serving as the photo resist, passivation material, and low kILD materials, among others, have been widely used for manufacturingvarious IC devices such as DRAM, SRAM, MEMS, imaging devices and CPU,among others. Increasingly, to enhance performance, a thinner and/or amore planar polymer film is desired. As device feature size continues toshrink, planarity requirements become increasingly stringent and suchpolymer materials need to be planarized. While chemical mechanicalpolishing (CMP) is a viable planarization method for IC devices, therehave been no CMP slurries developed specifically for polymer CMP. Usingun-optimized CMP slurries for polymer polishing can result in manyissues. For example, on occasions, the polymer is not cured completelyto get a high RR of polishing using conventional oxide slurry. Thismethod causes at least two drawbacks, one is the difficulty in CMPprocess control, for (1) the softness of the film is sensitive to evenminor curing variations; (2) it is hard to get a proper polishing stopfor the soft film if only mechanical polishing is used; and (3)mechanical polishing results in higher non-uniformity, scratch andresidue. Another drawback is after polishing, the film needs to be curedfor a second time, which lowers the throughput and is not costeffective.

On occasions, the polymer surface has been treated with N₂O or O₂ plasmabefore the polishing so that a desirable removal rate and stop layer canbe obtained. However, this solution is slow and not cost effective.Moreover, the defect issue can also be increased because the processuses oxide slurry rather than slurry designed specifically for thepolymer film. In addition, because both the polymer film and thepolishing pad are hydrophobic, during the polishing, wafer dropping canincrease due to the friction between the polymer film surface and thepolishing pad.

SUMMARY

Novel systems and methods are disclosed for polishing a semiconductorsubstrate having a polymer film surface deposited thereon bychemishearing the surface; and performing chemical mechanical polishing(CMP) on the chemisheared surface.

The chemishearing facilitates making the top polymer surface stiff,fragile or chapped and weaking or breaking bonds of polymer layer at topsurface, through which the removal rate and the planarization rate ofthe polymer film in a CMP process can be increased and the defectivitycan be reduced.

Implementations of the above novel aspect can include one of thefollowing. The chemishearing the surface can break bonds at top polymerlayer and making the surface stiff, fragile or chapped on a microscopicscale. A polymer CMP slurry can be applied to the system. Thechemishearing the surface can include one of the following: oxidizing,catalyzing, and local pyrogenating the surface. The CMP slurry can be anoxidation abrasive. The oxidation abrasive can be one of: ZrO₂, Al₂O₃,CaO, Fe₂O₃, MgO, and a particle with an oxidation adding particle to thepolymer including treated particles, or particle coated with —O—O—compound. The chemishearinging the surface can include micro-crackingthe surface. The CMP slurry can be a catalyst containing an abrasivesuch as Fe, Mn or Cu. The CMP slurry can include multiple abrasives. Theabrasives can include Fe₂O₃, Al or catalyst. The CMP slurry can includea pH tuning agent such as HCl, H₂SO₄H₃PO₄ Citric acid, NH₄OH, HNO₃,NaOH, KOH or an inorganic and organic acid and base. A surfactant can beadded to the slurry. The surfactant can be one of: polyethylene glycol,polyoxyethylene ether, glycerol, polypropylene glycol, polyvinylalcohol,polyacrylic acid, polymethyl acrylic acid, acrylic acid-axylatecopolymer), acrlic acid-hydroxypropyl acrylate copolymer, acrylicacrylate copolymer copolymer of maleic acid and acrylic acid, acrylicacid-hydroxypropyl acrylate ternary polymer, BOF, polyvinyl alcoholmodified by copolymerization, . copolymer of alkanolalkyl methacrylatewith alkanolamine, maleic-styrene copolymer and polyethylene glycol monomethyl copolymer, carboxylic acid modified polyvinylalcohol, derivativeof copolymer of ethylene glycol and polyamine, specific copolymerdispersant, hydroxy propyl acrylat and any other copolymer of monomers,isobutene, propylene oxide, 2-hydroxyethyl, methyl acrylate, maleicanhydride, acrylic acid, methacrylic acid acrylamide methyl acrylamidestyrene, and vinyl pyridine ketone, 1,2,3 benzotriazole (BTA), Indene,Benzofuran (coumarone), thionahpithene, 1-benzazole, 4-isobenzazole,indolenine or pseudoisoindole, isoindzzole, indazole, benzimidazole,indiazole, 1-pyrido[2,3-d]-ν-triazole, 1-pyrazolopyrazine,2-ν-triazolo[b]pyrazine, 1,2-benzeisoxzoble, benzopseudoxazole,benzofurazan, or purine. The CMP slurry can include an oxidize such as:—O—O— containing compounds, H₂O₂, salt of S₂O₄ ²⁻ or S₂O₈ ²⁻, KIO₃,Fe(NO₃)₂, KMnO₄, KNO₃ HNO₃, bromate, Bromine, Butadiene, Chlorates,Chloric acid, Chlorine, Chlorites, Chromates, Chromic Acid, Dichromates,Fluorine, haloates, Halogens, hypochlorites, Nitrous oxide, Ozanates,oxides, oxygen, oxygen difluoride ozone, peracetic acid perborates,perhaloate, percarbonates, perchlorates, perchloric acid, perhydrates,peroxides, persulfates, permanganates, sodium borate or sulfuric acid.The CMP slurry can include an enzyme. The CMP process can have thefollowing parameters:

-   -   Removal rate: 2000–5000 A/min.    -   Down force: no less than 1 psi    -   Turntable rotation speed: no less than 50 rpm.    -   Head speed no less than 30 rpm.    -   Conditioner: in situ or ex situ.    -   Pad: polyurethane pad

Other advantages may include one or more of the following. The slurryenables CMP to be a stable process for volume production. The novel CMPslurries include the following advantages: desired removal rate, less orno dishing, less or no defect issue (such as scratch), no corrosionissue, and reasonable cost of ownership (CoO). The slurries disclosedherein can be applied to the manufacturing of any products, includingbut not limited to logic devices (such as microprocessor), memoryproducts (DRAM, SRAM, FLASH, EEPROM, MRAM, FeDRAM, etc.), MEMS, MOMS,LCOS, CIS, and so on. Moreover, by using the slurries, a highly planarand highly reflective film surface can be obtained. The slurries can beused to form interconnects and mirror patterns useful for IC fabricationof circuits including imaging and other device applications.

The novel polymer CMP slurry can quickly or finely polish asurface-without making defects and flaws. Further, the CMP abrasive doesnot contaminate the surface to be polished. Moreover, the CMP slurry andsystems and methods disclosed improve the flatness of the polishedsurface of a substrate.

These and other embodiments, aspects and features of the invention willbe better understood from a detailed description of the preferredembodiments of the invention which are further described below inconjunction with the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more fully understood by reading thesubsequent detailed description in conjunction with the examples andreferences made to the accompanying drawings, wherein:

FIG. 1 shows an exemplary process for polishing a wafer.

FIG. 2 shows an exemplary system for polishing a wafer.

DESCRIPTION

There will now be described in detail with reference to the drawingssome preferred embodiments of the present invention applied to a CMPtool for planarizing and forming finely finished surface on thesemiconductor substrate. In the following description of the preferredembodiments, the same reference numerals as those in the prior figuresdenote similar parts for convenience of illustration.

FIG. 1 shows an exemplary process for semiconductor fabrication. Theprocess first chemishears the surface of a polymer on a semiconductorwafer (100). Next, the process performs chemical mechanical polishing(CMP) on the chemisheared surface with polymer CMP slurry (200). Detailsof the process of FIG. 1 are discussed below.

The polymer used in the IC manufacturing can be divided into two groupsaccording to the film hardness. One type is soft polymer, such asbenzocyclobutene, BCB, parylene-n and fluorinated polyimide, which havehigh removal rate given they were abraded mechanically only. Anothertype of polymer is hard polymer, for example, poly(arylene) ether,HSQ(Hydrogen silsesquioxane), MSQ(methyl silsesquioxane) among others,which is hard to remove given they were abraded mechanically only.

In one implementation of operation 100, the polymer film surface(approximately <500 Å thickness from top of surface) is chemisheared bymany factors, such as oxidation, catalyzing, local pyrogenation, amongothers, so that the surface becomes stiff, fragile and chapped on amicroscopic scale, which is easier to react with mechanical CMPoperation.

In another implementation, under the mechanical action and, to a lessextent, surface chemical reaction, micro-cracking and subsequentchemical solution diffusion into the sub-surface can be caused to occurat the surface being polished. The result is an enhanced surfacechemical reaction and accelerated removal rate.

The chemishearing enables the polymer surface to be more resistant todeformation under the pressure of a polishing pad so that higher regionsof the polymer film are polished first or polished at a faster pace thanlower regions of the polymer film, resulting in excellent planarization.Further, with the aid of the surfactant passivation, betterplanarization performance can be obtained. The polymer particles orresidues from the polishing are dispersed into the solution bysurfactant and carried away with the slurry flow. For a soft polymerfilm, hardening or passivation agent can be added into the slurry tomake the polymer film surface robust to the mechanical action. Sincenon-mechanical operations of the CMP operate without mechanical stress,lower defectivity can be achieved at the polymer surface.

In a CMP system, abrasive operations on the polymer surface apply moreforce than the mechanical polishing because the polymer is a ductilefilm and thus reliance on mechanical operations results in plowing andwrinkle type scratches. Moreover, it is also possible to leave largepolymer residues on the substrate. To avoid these issues, three kinds ofabrasives are used:

a. Oxidation Type Abrasive

This type of abrasive has an oxidizing ability. When the slurry hits thesurface of polymer under the polishing pad press, oxidation occurs onthe surface of the polymer film at the same time which changes the filmlocal hardness and causes the surface of the polymer to depolymerized.Under a chemical and mechanical co-effect, the polymer film is thenabraded and removed. The oxidation abrasive can be selected from ZrO₂,Al₂O₃, CaO, Fe₂O₃, MgO, etc., and any other particles presenting theoxidation ability to the polymer including treated particles.

b. Catalyst Containing Abrasive

This type of abrasive contains the catalyst or special enzyme which canaccelerate the chemishearing of the polymer surface. For example, Fe,Mn, or Cu can be added into the abrasive to serve as the polymeroxidation catalyst.

c. Multiple Abrasives

This type of abrasive contains a plurality of abrasives. The multipleabrasives in slurry serve two functions: one is to promote the polymerfilm surface's chemishearing, and the other is to prevent the padsurface from being chemisheared. The promotion function of chemishearingcan be realized by adding two or more types of particles contained inseparate dispensers. During the polishing, when different particles aremixed, they react with each other and release heat (for example, Fe2O3,Al and catalyst) or/and chemical such as —O—O— containing compounds, O₂and O₃ etc which accelerates the polymer film's chemishearing. Toprevent the pad from being chemisheared, another kind of particle (orsurfactant) which is inert to any other particles in slurries can beadded. The abrasive particles which promote film chemishearing have theproperties of easily adsorbing onto the polymer film surface rather thanthe pad surface, and the inert particle should have the properties ofthe easily adsorbing onto the pad surface, which can be realized in oneembodiment using the surfactant or optimizing iso-electric points ofparticles and pH value of the solution.

In one implementation, the content of the abrasive in the slurries rangefrom 0.1–10 weight percent, with 0.5–2% being preferred. And theabrasive's iso-electro point is preferably not the same as or close tothat of the polymer surface. By tuning the solution's pH value,abrasives attached on the polymer surface due to the electrostaticattraction can be easily removed.

In addition to the above types of abrasives, polymer abrasives can alsobe used for polishing polymer materials.

Generally acid or base is selected to favor the chemishearing of thepolymer. So according to the detailed polymer, the pH tuning agent isselected to maintain a acid or base solution condition. For example, forpolyimide, pH is 11 preferred. The pH tuning agent can be selected froma group of HCl, H2SO4H3PO4 Citric acid, NH4OH, HNO3, NaOH, KOH or anyother inorganic and organic acid and base.

3. Surfactant

Surfactants can be added into the slurry for four functions. One is toact as the abrasive dispersion agent. The second is to act as apassivation layer for the soft polymer surface or the polishing padsurface to control the mechanical reaction to the surface, and the thirdis to change the polymer surface's charge status. The fourth function isto change the wettability of the polymer film to eliminate the frictionbetween the polishing pad and the polymer film. Thus the wafer droppingissue during the polishing can be avoided. The surfactant can beselected from but not limited to a group consisting of polyethyleneglycol, polyoxyethylene ether, glycerol, polypropylene glycol,polyvinylalcohol, polyacrylic acid, polymethyl acrylic acid, acrylicacid-axylate copolymer), acrlic acid-hydroxypropyl acrylate copolymer,acrylic acrylate copolymer copolymer of maleic acid and acrylic acid,acrylic acid-hydroxypropyl acrylate ternary polymer, BOF, polyvinylalcohol modified by copolymerization, . copolymer of alkanolalkylmethacrylate with alkanolamine, maleic-styrene copolymer andpolyethylene glycol mono methyl copolymer, carboxylic acid modifiedpolyvinylalcohol, derivative of copolymer of ethylene glycol andpolyamine, specific copolymer dispersant, hydroxy propyl acrylat and anyother copolymer of monomers, isobutene, propylene oxide, 2-hydroxyethyl,methyl acrylate, maleic anhydride, acrylic acid, methacrylic acidacrylamide methyl acrylamide styrene, and vinyl pyridine ketone,1,2,3-benzotriazole(BTA),Indene,Benzofuran(coumarone),thionahpithene,1-benzazole, 4-isobenzazole, indolenine or pseudoisoindole, isoindzzole,indazole, benzimidazole, indiazole, 1-pyrido[2,3-d]-ν-triazole,1-pyrazolo pyrazine,2-ν-triazolo[b]pyrazine,1,2-benzeisoxzoble.benzopseudoxazole, benzofurazan, and purine.

The oxidizer used in the slurries enhances the polymer film surface'soxidation or chemishearing so that a good removal rate can be obtainedand the oxidation can also help to change the wet and charge status ofthe polymer film. The oxidizer agent can be selected from but notlimited to a group consisting of H2O2, salt of S2O42- or S2O82-, KIO3,Fe(No3)2, KMnO4, KNO3 HNO3, bromate, Bromine, Butadiene, Chlorates,Chloric acid, Chlorine, Chlorites, Chromates, Chromic Acid, Dichromates,Fluorine, haloates, Halogens, hypochlorites, Nitrous oxide, Ozanates,oxides, oxygen, oxygen difluoride ozone, peracetic acid perborates,perhaloate, percarbonates, perchlorates, perchloric acid, perhydrates,peroxides, persulfates, permanganates, sodium borate and sulfuric acid.

Other additives can also be used. For example, enzyme can be used.Because the chemishearing of polymer promoted by the enzyme has highlyspecificity, the utilization of enzymes in polymer's CMP can avoid thepad surface damage.

Exemplary process parameters for the polymer polishing can be asfollows:

-   -   Removal rate: 2000–5000 A/min.    -   Down force: no less than 1 psi    -   Turntable rotation speed: no less than 50 rpm.    -   Head speed no less than 30 rpm.    -   Conditioner: needed, in situ or ex situ.    -   Pad: polyurethane pad

The CMP system can have a fixed slurry delivery system or can have acomputer controlled slurry delivery system. The computer controlledslurry flow system decides the optimal flow rate of the slurry and theoptimal distance between a slurry injector and a polish head in order toget the maximum value of the removal rate of the CMP process. The slurryflow system controls the flow rate of the slurry that is dispensed on apolish pad and the distance between a slurry injector and a polish headto optimize the flow of the slurry on the polish pad. The rotationalspeed of the polish pad and the polish head, the pressure on the polishhead and the pressure on the wafer under the polish head are controlledfor maintaining the process parameters of a CMP process. In oneimplementation, the system includes a current detector that senses amotor current for driving a turntable of the CMP system and the turntable is adapted for rotating the polish pad of the CMP system. Thesystem changes the flow rate of the slurry and the position of theslurry injector, thus changing the distance between the injector and thepolish head, until the current reaches a minimum value.

As shown in FIG. 2, the polishing of the wafer with the polymer filmincludes positioning the surface on a polishing pad (22); supplyingpolishing slurry on the pad (24); and rotating and pressing the waferand the pad at the same time (26). Subsequently, the residue on thewafer can be removed. The CMP process can include: positioning thesurface of a wafer under a polishing pad; supplying the CMP slurry ontothe polishing pad; rotating the wafer and the polishing pad with certainspeeds, respectively and at the same time, pressing the wafer toward thepad with a certain down force. During or after the polishing, the padcondition is applied to remove the polishing residue. In addition, thepolished wafer is cleaned in a desired cleaning solution to removepolishing residue.

While the invention has been described by way of example and in terms ofthe above, it is to be understood that the invention is not limited tothe disclosed embodiments. On the contrary, it is intended to covervarious modifications and similar arrangements as would be apparent tothose skilled in the art. Therefore, the scope of the appended claimsshould be accorded the broadest interpretation so as to encompass allsuch modifications and similar arrangements.

1. A method for polishing a semiconductor substrate having a polymerfilm surface deposited thereon, comprising: chemishearing the surface;and performing chemical mechanical polishing (CMP) on the chemishearedsurface, wherein the CMP slurry comprises an oxidation abrasiveincluding one of: ZrO2, Al2O3, CaO, Fe2O3, MgO, and a particle with anoxidation adding particle to the polymer including one of: a treatedparticle and a particle coated with an —O—O— compound.
 2. The method ofclaim 1, wherein chemishearing the surface further comprises breakingbonds at a top polymer layer.
 3. The method of claim 1, whereinchemishearing the surface comprises one of: oxidizing, catalyzing, andlocal pyrogenating the surface.
 4. The method of claim 1, comprisingapplying a polymer CMP slurry.
 5. The method of claim 4, wherein the CMPslurry comprises a catalyst containing abrasive.
 6. The method of claim5, wherein the catalyst containing abrasive comprises one of: Fe, Mn andCu.
 7. The method of claim 4, wherein the CMP slurry comprises multipleabrasives.
 8. The method of claim 7, wherein the abrasives comprise oneof: Fe₂O₃, Al and catalyst.
 9. The method of claim 4, wherein the CMPslurry comprises a pH tuning agent.
 10. The method of claim 9 whereinthe tuning agent comprises one of: HCl, H₂SO₄H₃PO₄ Citric acid, NH₄OH,HNO₃, NaOH, KOH and an inorganic and organic acid and base.
 11. Themethod of claim 4, comprising providing a surfactant to the slurry. 12.The method of claim 11 wherein the surfactant comprises one of:polyethylene glycol, polyoxyethylene ether, glycerol, polypropyleneglycol, polyvinylalcohol, polyacrylic acid, polymethyl acrylic acid,acrylic acid-axylate copolymer), acrlic acid-hydroxypropyl acrylatecopolymer, acrylic acrylate copolymer copolymer of maleic acid andacrylic acid, acrylic acid-hydroxypropyl acrylate ternary polymer, BOF,polyvinyl alcohol modified by copolymerization, . copolymer ofalkanolalkyl methacrylate with alkanolamine, maleic-styrene copolymerand polyethylene glycol mono methyl copolymer carboxylic acid modifiedpolyvinylalcohol, derivative of copolymer of ethylene glycol andpolyamine, specific copolymer dispersant, hydroxy propyl acrylat and anyother copolymer of monomers, isobutene propylene oxide, 2-hydroxyethyl,methyl acrylate, maleic anhydride, acrylic acid, methacrylic acidacrylamide methyl acrylamide styrene, and vinyl pyridine ketone, 1,2,3benzotriazole (BTA), Indene, Benzofuran (coumarone),thionahpithene,1-benzazole,4-isobenzazole, indolenine orpseudoisoindole, isoindzzole, indazole, benzimidazole, indiazole,1-pyrido[2,3-d]-ν-triazole, 1-pyrazolo pyrazine,2-ν-triazolo[b]pyrazine,1,2-benzeisoxzoble, benzopseudoxazole, benzofurazan, and purine.
 13. Themethod of claim 4, wherein the CMP slurry comprises an oxidizer.
 14. Themethod of claim 13, wherein the oxidizer comprises one of: —O—O—containing compounds, H₂O₂, salt of S₂O₄ ²⁻ or S₂O₈ ²⁻; KIO₃, Fe(No₃)₂,KMnO₄, KNO₃ HNO₃, bromate, Bromine, Butadiene, Chlorates, Chloric acid,Chlorine, Chlorites, Chromates, Chromic Acid, Dichromates, Fluorine,haloates, Halogens, hypochlorites, Nitrous oxide, Ozanates, oxides,oxygen, oxygen difluoride ozone, peracetic acid perborates, perhaloate,percarbonates, perchlorates, perchloric acid, perhydrates, peroxides,persulfates, permanganates, sodium borate and sulfuric acid.
 15. Themethod of claim 4, wherein the CMP slurry comprises an enzyme.
 16. Themethod of claim 1, wherein chemishearing the surface comprisesmicro-cracking the surface.
 17. A method for polishing a semiconductorsubstrate having a polymer film surface deposited thereon, comprising:chemishearing the surface; and performing chemical mechanical polishing(CMP) on the chemisheared surface, wherein performing the CMP furthercomprises: Removal rate: 2000–5000 A/min. Down force: no less than 1 psiTurntable rotation speed: no less than 50 rpm. Head speed no less than30 rpm. Conditioner: in situ or ex situ. Pad: polyurethane pad.
 18. Themethod of claim 17, wherein the CMP slurry comprises an enzyme.
 19. Themethod of claim 17, wherein chemishearing the surface comprises one of:oxidizing, catalyzing, and local pyrogenating the surface.
 20. Themethod of claim 17, comprising applying a polymer CMP slurry.